Research
Driven by the applications of low-dimensional electronic materials in cutting-edge electronic and optoelectronic devices, we aim to develop innovative methods for their precise structural control, synthesis, and assembly. Our research focuses on uncovering the structure-property relationships of low-dimensional electronic materials and exploring novel approaches to constructing two-dimensional electronic devices, with an emphasis on chemical synthesis and ordered assembly.
1. In the domain of chemical precision synthesis and ordered structure assembly, we achieve precise control of the underlying materials by fabricating patterned high-quality monolayer TMDC (Transition Metal Dichalcogenide) nanostructures.By utilizing different functional regions, monolayer MoS2 can be efficiently synthesized in specific patterned areas. This method not only enhances material uniformity and quality but also allows the preparation of complex geometric shapes in 2D materials. The clean assembly technique of highly aligned CNT (Carbon Nanotube) bundles further improves the electrical, thermal, and mechanical properties by optimizing alignment and reducing impurities. The efficient transfer characteristics from single tubes to bundle arrays provide a solid material foundation for developing new electronic devices, showing great promise for applications in nanoelectronics and high-performance devices.
2. In the realm of interface regulation, we propose a new pathway for room-temperature synthesis of monolayer asymmetric TMDC. Through the reaction of H2 plasma with selenium free radicals, the Janus structure conversion is successfully achieved. This process involves the efficient reaction of activated hydrogen plasma with selenium free radicals, enabling the formation of monolayer TMDC with unique properties at room temperature. Additionally, the regulation of interlayer coupling through spontaneous electric dipole moments further strengthens the van der Waals heterostructure's interlayer coupling strength. This method effectively improves interlayer charge transfer and interface stability, offering novel insights and technical approaches for enhancing material optoelectronic properties and functionalization. These findings are expected to advance the application of high-performance 2D materials in electronic devices and energy conversion fields.
3. In the field of device applications, we have developed a transistor technology featuring sub-10 nm source/drain electrodes. This technology boasts the advantages of small size and low contact resistance, significantly enhancing the integration and performance of the devices. Additionally, the sub-nanometer channel technology further optimizes the electrical characteristics of the devices, demonstrating excellent performance in high current density and low power consumption. These advancements not only drive the development of nanoelectronics but also provide new possibilities for the design of high-performance electronic devices, laying the foundation for applications in integrated circuits, sensors, and other microelectronic systems.